Responsible for both small signal and large signal circuit design and simulation of RF Frontend blocks such as Switches, PA, LNA, Bandgap, and other circuits.
Perform hands-on circuit design, modeling, and verification in either CMOS or SOI or SiGe HBT process. Responsible for corner, PVT, and Monte Carlo simulation.
Participate in layout, DRC / LVS, and post-layout optimizations.
Perform electro-magnetic (EM) modeling of circuits and block level and beyond including packaging and PCB.
As member of RF IC design team, will work with other design engineers to optimize critical performances such as LNA NF and current, PA efficiency, linearity, and ACPR / EVM.
Lead / Participate in evaluating, measuring, and debugging silicon until it reaches high volume production.
Required Technical Skills:
Must have thorough knowledge of semiconductor process such as CMOS, SOI, and BiCMOS. Knowledge of III-V technologies is a plus.
Must have proven design experience in CMOS analog/RFIC blocks above 1GHz.
Must be proficient with EDA tools - ADS, Momentum, HFSS, Cadence Spectre / SpectreRF / GoldenGate under Linux / Unix.
Direct product development experience (chip level and RF system level) through product definition to mass production is preferred.
Must have solid fundamentals in PA, LNA, and switch. Prior design experience with high-speed / high-bandwidth op-amp, band-gap, current source, control logic, LDO, RF detector, coupler, and filter is a plus.
SOI / CMOS mmWave IC Design with layout experience is a plus.
Experience and Education:
MSEE thesis/PhD dissertation on Multi-GHz CMOS / SOI / BiCMOS wireless transceiver circuit blocks or front-end module are preferred.
MSEE / BSEE with 5+ years of industry experience is preferred, fresh PhD is welcome to apply.
Team player with a solid communication skill while achieving expected results, working remotely.
